The quality of 200 mm diameter epitaxial Si wafers for advanced CMOS technology monitored using synchrotron X-ray topography
| Autor: | McNally, Patrick J. a, *, Danilewsky, A.N. b, Curley, J.W. a, Reader, A c, Rantamäki, R. d, Tuomi, T. d, Bolt, M. c, Taskinen, M. d |
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| Zdroj: | In Microelectronic Engineering 1999 45(1):47-56 |
| Databáze: | ScienceDirect |
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