Impact of low-temperature and low-pressure mild oxidation after plasma solidification on electrical properties and reliability in ultra-thin SiON MOSFETs
Autor: | Teng, Qiao, Wu, Yongyu, Xu, Kai, Gao, Dawei |
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Zdroj: | In Microelectronic Engineering 15 September 2024 292 |
Databáze: | ScienceDirect |
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