Impact of low-temperature and low-pressure mild oxidation after plasma solidification on electrical properties and reliability in ultra-thin SiON MOSFETs

Autor: Teng, Qiao, Wu, Yongyu, Xu, Kai, Gao, Dawei
Zdroj: In Microelectronic Engineering 15 September 2024 292
Databáze: ScienceDirect