Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching applications
| Autor: | Elwaradi, R., Frayssinet, E., Chenot, S., Bouyer, Y., Nemoz, M., Cordier, Y. |
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| Zdroj: | In Microelectronic Engineering 15 May 2023 277 |
| Databáze: | ScienceDirect |
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