A novel high-performance junctionless 4H-SiC trench MOSFET with improved switching characteristics
| Autor: | Zerroumda, B., Ferhati, H., Djeffal, F., Benaggoune, S. |
|---|---|
| Zdroj: | In Microelectronic Engineering 15 May 2023 277 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect