Development of n-type epitaxial growth on 200 mm 4H-SiC wafers for the next generation of power devices
| Autor: | Musolino, Mattia, Carria, Egidio, Crippa, Danilo, Preti, Silvio, Azadmand, Mani, Mauceri, Marco, Isacson, Mathias, Calabretta, Michele, Messina, Angelo |
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| Zdroj: | In Microelectronic Engineering 1 April 2023 274 |
| Databáze: | ScienceDirect |
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