Investigation of trapping/de-trapping dynamics of surface states in AlGaN/GaN high-electron mobility transistors based on dual-gate structures

Autor: Luan, Tiantian, Jiang, Qimeng, Huang, Sen, Wang, Xinhua, Jin, Hao, Guo, Fuqiang, Yao, Yixu, Fan, Jie, Yin, Haibo, Wei, Ke, Li, Yankui, Jiang, Haojie, Li, Junfeng, Liu, Xinyu
Zdroj: In Microelectronic Engineering 25 January 2023 269
Databáze: ScienceDirect