Nanobeam electron diffraction strain mapping in monocrystalline silicon of modern trench power MOSFETs
| Autor: | Karner, Stefan, Blank, Oliver, Rösch, Maximilian, Zalesak, Jakub, Keckes, Jozef, Gammer, Christoph |
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| Zdroj: | In Microelectronic Engineering 15 August 2022 264 |
| Databáze: | ScienceDirect |
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