Low-temperature (≤550 °C) p-channel Schottky barrier SOI FinFETs for monolithic 3D integration

Autor: Mao, Shujuan, Gao, Jianfeng, He, Xiaobing, Liu, Weibing, Zhou, Na, Luo, Yanna, Cao, Lei, Hu, Yanpeng, Zhang, Yongkui, Liu, Jinbiao, Wang, Guilei, Li, Tingting, Wu, Zhenhua, Li, Yongliang, Li, Junfeng, Luo, Jun, Zhao, Chao, Wang, Wenwu, Yin, Huaxiang
Zdroj: In Microelectronic Engineering 1 May 2022 260
Databáze: ScienceDirect