Performance improvement of Al0.3Ga0.7N/AlN/GaN HEMTs using Nitrogen pre-treated Si3N4 passivation
| Autor: | Rastogi, Gunjan, Chaitanya, M. Krishna, Khare, Sanjeev, Yadav, Ekta, Kaneriya, R.K., Upadhyay, R.B., Kumar, Punam Pradeep, Bhattacharya, A.N. |
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| Zdroj: | In Microelectronic Engineering 15 September 2021 249 |
| Databáze: | ScienceDirect |
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