Pre-deposition growth of interfacial SiO2 layer by low-oxygen-partial-pressure oxidation in the Al2O3/4H-SiC MOS structure
| Autor: | Zhai, Dongyuan, Lv, Zhipei, Zhao, Yi, Lu, Jiwu |
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| Zdroj: | In Microelectronic Engineering 1 May 2021 244-246 |
| Databáze: | ScienceDirect |
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