Effect of concentration change of 0.1% triton added 25 wt% TMAH during fabrication of deep cavities with mesa structures in SOI wafer

Autor: Menon, P. Krishna, Ashok, Akarapu, Rao, A.V. Narasimha, Pandey, Ashok Kumar, Pal, Prem
Zdroj: In Microelectronic Engineering 15 April 2020 227
Databáze: ScienceDirect