Double p-base structure for 1.2-kV SiC trench MOSFETs with the suppression of electric-field crowding at gate oxide
| Autor: | Seok, Ogyun, Kang, In Ho, Moon, Jeong Hyun, Kim, Hyoung Woo, Ha, Min-Woo, Bahng, Wook |
|---|---|
| Zdroj: | In Microelectronic Engineering 15 March 2020 225 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect