High quality interfacial layer formation for Si0.75Ge0.25 (100) high-k metal gate stack
| Autor: | Siddiqui, S., Galatage, R., Zhao, W., Muthinti, G. Raja, Fronheiser, J., Srinivasan, P., Triyoso, D.H., Sporer, R., Jagannathan, H., Haran, B., Knorr, A. |
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| Zdroj: | In Microelectronic Engineering 15 February 2020 223 |
| Databáze: | ScienceDirect |
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