Impact of roughness of TiN bottom electrode on the forming voltage of HfO2 based resistive memories
| Autor: | Charpin-Nicolle, C., Bonvalot, M., Sommer, R., Persico, A., Cordeau, M.L., Belahcen, S., Eychenne, B., Blaise, Ph., Martinie, S., Bernasconi, S., Jalaguier, E., Nowak, E. |
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| Zdroj: | In Microelectronic Engineering 15 January 2020 221 |
| Databáze: | ScienceDirect |
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