Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors

Autor: Hirose, Masafumi, Nabatame, Toshihide, Yuge, Kazuya, Maeda, Erika, Ohi, Akihiko, Ikeda, Naoki, Irokawa, Yoshihiro, Iwai, Hideo, Yasufuku, Hideyuki, Kawada, Satoshi, Takahashi, Makoto, Ito, Kazuhiro, Koide, Yasuo, Kiyono, Hajime
Zdroj: In Microelectronic Engineering 15 August 2019 216
Databáze: ScienceDirect