Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors
Autor: | Hirose, Masafumi, Nabatame, Toshihide, Yuge, Kazuya, Maeda, Erika, Ohi, Akihiko, Ikeda, Naoki, Irokawa, Yoshihiro, Iwai, Hideo, Yasufuku, Hideyuki, Kawada, Satoshi, Takahashi, Makoto, Ito, Kazuhiro, Koide, Yasuo, Kiyono, Hajime |
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Zdroj: | In Microelectronic Engineering 15 August 2019 216 |
Databáze: | ScienceDirect |
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