Determination of energy thresholds of electron excitations at semiconductor/insulator interfaces using trap-related displacement currents
Autor: | Afanas'ev, V.V., Schubert, J., Neft, A., Delie, G., Shlyakhov, I., Trepalin, V., Houssa, M., Stesmans, A. |
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Zdroj: | In Microelectronic Engineering 15 July 2019 215 |
Databáze: | ScienceDirect |
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