Determination of energy thresholds of electron excitations at semiconductor/insulator interfaces using trap-related displacement currents

Autor: Afanas'ev, V.V., Schubert, J., Neft, A., Delie, G., Shlyakhov, I., Trepalin, V., Houssa, M., Stesmans, A.
Zdroj: In Microelectronic Engineering 15 July 2019 215
Databáze: ScienceDirect