3D system integration on 300 mm wafer level: High-aspect-ratio TSVs with ruthenium seed layer by thermal ALD and subsequent copper electroplating
| Autor: | Killge, Sebastian, Bartusseck, Irene, Junige, Marcel, Neumann, Volker, Reif, Johanna, Wenzel, Christian, Böttcher, Mathias, Albert, Matthias, Jürgen Wolf, M., Bartha, Johann W. |
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| Zdroj: | In Microelectronic Engineering 15 January 2019 205:20-25 |
| Databáze: | ScienceDirect |
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