Source engineered tunnel FET for enhanced device electrostatics with trap charges reliability
| Autor: | Raad, Bhagwan Ram, Sharma, Dheeraj, Tirkey, Sukeshni |
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| Zdroj: | In Microelectronic Engineering 5 July 2018 194:79-84 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect