Wet and Siconi® cleaning sequences for SiGe p-type metal oxide semiconductor channels
Autor: | Raynal, P.E., Loup, V., Vallier, L., Martin, M., Moeyaert, J., Pelissier, B., Rodriguez, Ph., Hartmann, J.M., Besson, P. |
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Zdroj: | In Microelectronic Engineering 5 February 2018 187-188:84-89 |
Databáze: | ScienceDirect |
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