Wet and Siconi® cleaning sequences for SiGe p-type metal oxide semiconductor channels

Autor: Raynal, P.E., Loup, V., Vallier, L., Martin, M., Moeyaert, J., Pelissier, B., Rodriguez, Ph., Hartmann, J.M., Besson, P.
Zdroj: In Microelectronic Engineering 5 February 2018 187-188:84-89
Databáze: ScienceDirect