Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

Autor: Tikhov, S.V., Mikhaylov, A.N., Belov, A.I., Korolev, D.S., Antonov, I.N., Karzanov, V.V., Gorshkov, O.N., Tetelbaum, D.I., Karakolis, P., Dimitrakis, P.
Zdroj: In Microelectronic Engineering 5 February 2018 187-188:134-138
Databáze: ScienceDirect