Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors
Autor: | Tikhov, S.V., Mikhaylov, A.N., Belov, A.I., Korolev, D.S., Antonov, I.N., Karzanov, V.V., Gorshkov, O.N., Tetelbaum, D.I., Karakolis, P., Dimitrakis, P. |
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Zdroj: | In Microelectronic Engineering 5 February 2018 187-188:134-138 |
Databáze: | ScienceDirect |
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