Electronic transport parameters of indium zinc oxide thin films after Al2O3/HfO2 top-dielectric formation annealing
| Autor: | Umana-Membreno, G.A., Song, Y., Akhavan, N.D., Antoszewski, J., Paine, D.C., Zaslavsky, A., Faraone, L. |
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| Zdroj: | In Microelectronic Engineering 25 June 2017 178:164-167 |
| Databáze: | ScienceDirect |
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