Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing
| Autor: | Lin, Jun, Monaghan, Scott, Cherkaoui, Karim, Povey, Ian M., Sheehan, Brendan, Hurley, Paul K. |
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| Zdroj: | In Microelectronic Engineering 25 June 2017 178:204-208 |
| Databáze: | ScienceDirect |
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