Depth profiling investigation by pARXPS and MEIS of advanced transistor technology gate stack
| Autor: | Fauquier, L., Pelissier, B., Jalabert, D., Pierre, F., Gassilloud, R., Doloy, D., Beitia, C., Baron, T. |
|---|---|
| Zdroj: | In Microelectronic Engineering 5 February 2017 169:24-28 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect