Electromigration behavior of advanced metallization on the structural effects for memory devices
| Autor: | Jang, Kyung-Tae, Park, Yong-Jin, Jeong, Min-Woo, Lim, Seung-Min, Yeon, Han-Wool, Cho, Ju-Young, Jin, Min-Gi, Shin, Jin-Sub, Woo, Byoung-Wook, Bae, Jang-Yong, Hwang, Yu-Chul, Joo, Young-Chang |
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| Zdroj: | In Microelectronic Engineering 20 April 2016 156:97-102 |
| Databáze: | ScienceDirect |
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