Hot-carrier degradation model for nanoscale ultra-thin body ultra-thin box SOI MOSFETs suitable for circuit simulators
| Autor: | Karatsori, T.A., Theodorou, C.G., Haendler, S., Planes, N., Ghibaudo, G., Dimitriadis, C.A. |
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| Zdroj: | In Microelectronic Engineering 15 June 2016 159:9-16 |
| Databáze: | ScienceDirect |
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