Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes
| Autor: | Rossmann, H.R., Bubendorf, A., Zanella, F., Marjanović, N., Schnieper, M., Meyer, E., Jung, T.A., Gobrecht, J., Minamisawa, R.A., Bartolf, H. |
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| Zdroj: | In Microelectronic Engineering 1 September 2015 145:166-169 |
| Databáze: | ScienceDirect |
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