A novel technique exploiting C–V, G–V and I–V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III–V MOSFETs
| Autor: | Sereni, G., Larcher, L., Vandelli, L., Veksler, D., Kim, T., Koh, D., Bersuker, G. |
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| Zdroj: | In Microelectronic Engineering 1 November 2015 147:281-284 |
| Databáze: | ScienceDirect |
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