Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process
| Autor: | Fu, C.H., Lin, Y.H., Lee, W.C., Lin, T.D., Chu, R.L., Chu, L.K., Chang, P., Chen, M.H., Hsueh, W.J., Chen, S.H., Brown, G.J., Chyi, J.I., Kwo, J., Hong, M. |
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| Zdroj: | In Microelectronic Engineering 1 November 2015 147:330-334 |
| Databáze: | ScienceDirect |
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