Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM
| Autor: | Kruchinin, V.N., Aliev, V.Sh., Perevalov, T.V., Islamov, D.R., Gritsenko, V.A., Prosvirin, I.P., Cheng, C.H., Chin, A. |
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| Zdroj: | In Microelectronic Engineering 1 November 2015 147:165-167 |
| Databáze: | ScienceDirect |
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