Hall-effect characterization of electron transport at SiO2/4H-SiC MOS interfaces
| Autor: | Umana-Membreno, G.A., Dhar, S., Choudhary, A., Ryu, S.-H., Antoszewski, J., Faraone, L. |
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| Zdroj: | In Microelectronic Engineering 1 November 2015 147:137-140 |
| Databáze: | ScienceDirect |
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