High contrast 3D proximity correction for electron-beam lithography: An enabling technique for the fabrication of suspended masks for complete device fabrication within an UHV environment
| Autor: | Rosamond, Mark C., Batley, Joseph T., Burnell, Gavin, Hickey, Bryan J., Linfield, Edmund H. |
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| Zdroj: | In Microelectronic Engineering 1 August 2015 143:5-10 |
| Databáze: | ScienceDirect |
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