Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias
| Autor: | Baer, E., Evanschitzky, P., Lorenz, J., Roger, F., Minixhofer, R., Filipovic, L., de Orio, R.L., Selberherr, S. |
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| Zdroj: | In Microelectronic Engineering 2 April 2015 137:141-145 |
| Databáze: | ScienceDirect |
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