Fabrication of double recess structure by single lithography step using silicon-nitride-assisted process in pseudomorphic HEMTs
| Autor: | Bhat, K. Mahadeva, Pathak, Saptarshi, Sai Saravanan, G., Sridhar, Ch., Bhaskar, S., Badnikar, S.L., Vyas, H.P., Muralidharan, R., Jain, M.K., Subrahmanyam, A. |
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| Zdroj: | In Microelectronic Engineering 5 September 2014 127:61-67 |
| Databáze: | ScienceDirect |
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