Buried triple-gate structures for advanced field-effect transistor devices

Autor: Müller, M.R., Gumprich, A., Schütte, F., Kallis, K., Künzelmann, U., Engels, S., Stampfer, C., Wilck, N., Knoch, J.
Zdroj: In Microelectronic Engineering 1 May 2014 119:95-99
Databáze: ScienceDirect