Effect of Ti doping and annealing on multi-level forming-free resistive random access memories with atomic layer deposited HfTiOx nanolaminate
| Autor: | Chakrabarti, B., Vogel, E.M. |
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| Zdroj: | In Microelectronic Engineering September 2013 109:193-196 |
| Databáze: | ScienceDirect |
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