Reduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-κ/metal gate stacks on Si
| Autor: | Nichau, A., Schäfer, A., Knoll, L., Wirths, S., Schram, T., Ragnarsson, L.-Å., Schubert, J., Bernardy, P., Luysberg, M., Besmehn, A., Breuer, U., Buca, D., Mantl, S. |
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| Zdroj: | In Microelectronic Engineering September 2013 109:109-112 |
| Databáze: | ScienceDirect |
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