Gallium arsenide passivation method for the employment of High Electron Mobility Transistors in liquid environment

Autor: Sileo, Leonardo, Martiradonna, Luigi, Brunetti, Virgilio, Tasco, Vittorianna, De Vittorio, Massimo
Zdroj: In Microelectronic Engineering September 2012 97:333-336
Databáze: ScienceDirect