High mobility CMOS transistors on Si/SiGe heterostructure channels

Autor: Oh, Jungwoo, Jeon, Kanghoon, Lee, Se-Hoon, Huang, Jeff, Hung, P.Y., Ok, Injo, Sassman, Barry, Ko, Dae-Hong, Kirsch, Paul, Jammy, Raj
Zdroj: In Microelectronic Engineering September 2012 97:26-28
Databáze: ScienceDirect