TiN/titanium–aluminum oxynitride/Si as new gate structure for 3D MOS technology
| Autor: | Miyoshi, J., Lima, L.P.B., Diniz, J.A., Cavarsan, F.A., Doi, I., Godoy Filho, J., Silva, A.R. |
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| Zdroj: | In Microelectronic Engineering April 2012 92:140-144 |
| Databáze: | ScienceDirect |
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