Performance of (1 1 0) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes

Autor: Ohata, A., Bae, Y., Signamarcheix, T., Widiez, J., Ghyselen, B., Faynot, O., Clavelier, L., Cristoloveanu, S.
Zdroj: In Microelectronic Engineering 2011 88(7):1265-1268
Databáze: ScienceDirect