Performance of (1 1 0) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes
Autor: | Ohata, A., Bae, Y., Signamarcheix, T., Widiez, J., Ghyselen, B., Faynot, O., Clavelier, L., Cristoloveanu, S. |
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Zdroj: | In Microelectronic Engineering 2011 88(7):1265-1268 |
Databáze: | ScienceDirect |
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