Improving electrical characteristics of W/HfO 2/In 0.53Ga 0.47As gate stacks by altering deposition techniques
| Autor: | Zade, D., Kakushima, K., Kanda, T., Lin, Y.C., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Chang, E.Y., Natori, K., Hattori, T., Iwai, H. |
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| Zdroj: | In Microelectronic Engineering 2011 88(7):1109-1112 |
| Databáze: | ScienceDirect |
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