Stack engineering of TANOS charge-trap flash memory cell using high-κ ZrO 2 grown by ALD as charge trapping layer
| Autor: | Congedo, G., Lamperti, A., Lamagna, L., Spiga, S. |
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| Zdroj: | In Microelectronic Engineering 2011 88(7):1174-1177 |
| Databáze: | ScienceDirect |
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