Lanthanum diffusion in the TiN/LaO x/HfSiO/SiO 2/Si stack

Autor: Martinez, E., Ronsheim, P., Barnes, J.-P., Rochat, N., Py, M., Hatzistergos, M., Renault, O., Silly, M., Sirotti, F., Bertin, F., Gambacorti, N.
Zdroj: In Microelectronic Engineering 2011 88(7):1349-1352
Databáze: ScienceDirect