SiON and SiO 2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum

Autor: Delcroix, P. a, b, ⁎, Blonkowski, S. a, Kogelschatz, M. b, Rafik, M. a, Gourhant, O. a, JeanJean, D. a, Beneyton, R. a, Roy, D. a, Federspiel, X. a, Martin, F. c, Garros, X. c, Grampeix, H. c, Gassilloud, R. c
Zdroj: In Microelectronic Engineering 2011 88(7):1376-1379
Databáze: ScienceDirect
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