Improvement of interface quality by post-annealing on silicon nanowire MOSFET devices with multi-wire channels
| Autor: | Kim, Seonghyun, Jo, Minseok, Jung, Seungjae, Choi, Hyejung, Lee, Joonmyoung, Chang, Man, Cho, Chunhum, Hwang, Hyunsang |
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| Zdroj: | In Microelectronic Engineering March 2011 88(3):273-275 |
| Databáze: | ScienceDirect |
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