Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
| Autor: | Vincent, B., Shimura, Y., Takeuchi, S., Nishimura, T., Eneman, G., Firrincieli, A., Demeulemeester, J., Vantomme, A., Clarysse, T., Nakatsuka, O., Zaima, S., Dekoster, J., Caymax, M., Loo, R. |
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| Zdroj: | In Microelectronic Engineering 2011 88(4):342-346 |
| Databáze: | ScienceDirect |
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