Effect of fluorine interface redistribution on performance of AlGaN/GaN HEMTs

Autor: Lalinský, T., Vanko, G., Vincze, A., Haščík, Š., Osvald, J., Donoval, D., Tomáška, M., Kostič, I.
Zdroj: In Microelectronic Engineering 2011 88(2):166-169
Databáze: ScienceDirect