Influence of the additives argon, O 2, C 4F 8, H 2, N 2 and CO on plasma conditions and process results during the etch of SiCOH in CF 4 plasma
| Autor: | Zimmermann, S., Ahner, N., Blaschta, F., Schaller, M., Zimmermann, H., Rülke, H., Lang, N., Röpcke, J., Schulz, S.E., Gessner, T. |
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| Zdroj: | In Microelectronic Engineering 2011 88(5):671-676 |
| Databáze: | ScienceDirect |
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