HfAlO x high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties
| Autor: | Mallik, S., Mahata, C., Hota, M.K., Dalapati, G.K., Chi, D.Z., Sarkar, C.K., Maiti, C.K. |
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| Zdroj: | In Microelectronic Engineering 2010 87(11):2234-2240 |
| Databáze: | ScienceDirect |
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