Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor

Autor: Choi, Won-Ho, Oh, Jungwoo, Yoo, Ook-Sang, Han, In-Shik, Na, Min-Ki, Kwon, Hyuk-Min, Park, Byung-Suk, Majhi, P., Tseng, H.-H., Jammy, R., Lee, Hi-Deok
Zdroj: In Microelectronic Engineering 2011 88(12):3424-3427
Databáze: ScienceDirect